Structure and Electrical Properties of Carbon-Rich Polymer Derived Silicon Carbonitride (SiCN)

This article reports on the structure and electronic properties of carbon-rich polysilazane polymer-derived silicon carbonitride (C/SiCN) corresponding to pyrolysis temperatures between 1100 1600 °C in an argon atmosphere. Raman spectroscopy, X-ray diffraction (XRD), energy dispersive spectroscopy (EDX), Scanning Electron Microscopy (SEM) Hall measurements were used support structural characterization prepared C/SiCN nanocomposites. A analysis using showed evolution sp2 hybridized carbon phase that resulted from growth lateral crystallite size (La), average continuous graphene length including tortuosity (Leq) inter-defects distance (LD) with increase temperature. The monoliths a record high room temperature (RT) electrical conductivity 9.6 S/cm for sample at °C. nanocomposites determined measurement revealed anomalous change predominant charge carriers n-type samples pyrolyzed predominantly p-type 1400 According this outcome, tailor-made SiCN ceramics could be developed produce semiconductors development next generation systems applications extreme environments.